PDV-P5002资料

CdS Photoconductive Photocells

PDV-P5002

PACKAGE DIMENSIONS INCH [mm]PACKAGE DIMENSIONS INCH [mm] +.015 [0.38]±.010 [0.25]-.010 [0.25].366 [9.30].079 [2.00]EPOXY ON LEADS 3 mm MAX 2X Ø.016 [0.40] .300 [7.62] PLASTICCOATED ±.010 [0.25]Ø.433 [11.00] 2X 1.437 [36.5] CERAMIC PACKAGE FEATURES DESCRIPTION APPLICATIONS • Visible light response • Sintered construction • Low cost Resistance in Kohms ABSOLUTEMAXIMUMRATING SYMBOL PARAMETER Vpk Applied Voltage Pd Δpo/Δt TO The PDV-P5002 are (CdS), Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls nm. These light dependent resistors are available in • Night light Controls a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCEVS. ILLUMINANCE (TA)=23°CUNLESSOTHERWISENOTED1000 MIN MAX UNITS 350 400 +75 +260 V mW/°C °C °C 100Continuous Power Dissipation 10Operating and Storage Temperature -30 TS Soldering Temperature* 1 * 0.200 inch from base for 3 seconds with heat sink. 110Illuminance in lux 100 ELECTRO-OPTICALCHARACTERISTICSRATING(TA)=23°CUNLESSOTHERWISENOTED SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP RD Dark Resistance After 10 sec. @ 10 Lux @ 2856 °K 0.5 RI Illuminated Resistance 12 10 Lux @ 2856 °K S lrange lpeak tr Tf LOG(R100)-LOG(R10)** LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K Sensitivity MAX 30 UNITS MW KW W/Lux nm nm ms ms 0.75 400 700 520 55 25 **R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06