METHODS OF FORMING CAPACITORS

专利名称：METHODS OF FORMING CAPACITORS发明人：Garo J. Derderian,Kevin R. Shea申请号：US1081申请日：20040720

公开号：US20060019461A1公开日：20060126

专利附图：

摘要：This invention includes methods of forming capacitors. In one implementation, afirst capacitor electrode material is formed over a substrate. The first capacitor electrodematerial is exposed to a nitrogen comprising atmosphere effective to form a dielectricsilicon and nitrogen comprising material on the first capacitor electrode material. The

dielectric silicon and nitrogen comprising material is exposed to an aqueous fluidcomprising a base and an oxidizer. The aqueous fluid has a pH greater than 7.0. After theexposing to the aqueous fluid, an aluminum oxide comprising capacitor dielectric materialis deposited over the first capacitor electrode material. A second capacitor electrodematerial is formed over the aluminum oxide comprising capacitor dielectric material.Other aspects and implementations are contemplated.

申请人：Garo J. Derderian,Kevin R. Shea

地址：Boise ID US,Boise ID US

国籍：US,US

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