专利名称：ESD-Protection Circuit for Integrated Circuit
Device
发明人：Philippe Deval,Marija Fernandez,Patrick
Besseux,Rohan Braithwaite
申请号：US14167331申请日：20140129
公开号：US20140210007A1公开日：20140731
专利附图：
摘要：A double-diffused metal oxide semiconductor (DMOS) structure is configured asan open drain output driver having electrostatic discharge (ESD) protection and a reverse
voltage blocking diode inherent in the structure and without requiring metal connectionsfor the ESD and reverse voltage blocking diode protections.
申请人：Microchip Technology Incorporated
地址：Chandler AZ US
国籍：US
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