Bipolar transistor for an integrated circuit havin

专利名称：Bipolar transistor for an integrated circuit

having variable value emitter ballastresistors

发明人：James D. Beasom申请号：US10366158申请日：20030213公开号：US06946720B2公开日：20050920

专利附图：

摘要：An integrated circuit including a bipolar transistor with improved forwardsecond breakdown is disclosed. In one embodiment, the bipolar transistor includes a

base, a collector, a plurality of emitter sections coupled to a common emitter and aballast emitter for each emitter section. Each ballast resistor is coupled between thecommon emitter and an associated emitter section. The size of each ballast resistor isselected so that the size of the ballast resistors vary across a two dimensional directionin relation to a lateral surface of the bipolar transistor.

申请人：James D. Beasom

地址：Melbourne Village FL US

国籍：US

代理机构：Fogg and Associates, LLC

代理人：Scott V. Lundberg

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