Method of forming electrical connections

专利名称：Method of forming electrical connections发明人：Chung-Shi Liu,Shin-Puu Jeng,Mirng-Ji

Lii,Chen-Hua Yu

申请号：US12768025申请日：20100427公开号：US08377816B2公开日：20130219

专利附图：

摘要：A method of forming electrical connections to a semiconductor wafer. Asemiconductor wafer comprising an insulation layer is provided. The insulation layer has asurface. A patterned mask layer is formed over the surface of the insulation layer. The

patterned mask layer exposes portions of the surface of the insulation layer through aplurality of holes. The portions of the plurality of holes are filled with a metal materialcomprising copper to form elongated columns of the metal material. The elongatedcolumns of the metal material have a sidewall surface. The patterned mask layer isremoved to expose the sidewall surface of the elongated columns of the metal material.A protection layer is formed on the exposed sidewall surface of the elongated columnsof the metal material.

申请人：Chung-Shi Liu,Shin-Puu Jeng,Mirng-Ji Lii,Chen-Hua Yu

地址：Shinchu TW,Hsinchu TW,Sinpu Township TW,Hsinchu TW

国籍：TW,TW,TW,TW

代理机构：Lowe Hauptman Ham & Berner, LLP

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