MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATI

专利名称：MEMORY DEVICE, MEMORY SYSTEM AND

METHOD OF OPERATING MEMORY DEVICE

发明人：SANG-WAN NAM,Doo-Hyun Kim,Dae-Seok

Byeon,Chi-Weon Yoon

申请号：US1437申请日：20170227

公开号：US20170168742A1公开日：20170615

专利附图：

摘要：A memory device is provided as follows. A memory cell region includes aplurality of blocks, each block including a plurality of NAND strings. A control logic

divides the plurality of blocks into a plurality of block regions based on a smallerdistance of a first distance with respect to a first edge of the memory cell region and asecond distance with respect to a second edge of the memory cell region and controlsan operation performed on the memory cell region using a plurality of bias sets ofoperation parameters for the operation. Each bias set is associated with one of the blockregions.

申请人：SANG-WAN NAM,Doo-Hyun Kim,Dae-Seok Byeon,Chi-Weon Yoon

地址：Hwaseong-si KR,Ansan-si KR,Seongnam-si KR,Seoul KR

国籍：KR,KR,KR,KR

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