Method of fabricating SOI wafer

专利名称：Method of fabricating SOI wafer

发明人：Kyoung Wan Park,Seong Jae Lee,Moon Ho

Park,Min Cheol Shin,Sang Chul Oh

申请号：US09/139651申请日：19980825公开号：US06037198A公开日：20000314

摘要：The present invention is to fabricate SOI wafer whose the silicon layer is veryuniform and the impurity concentration is low. The insulating layer, that is, a compositelayer of SiO2 and silicon, is grown on oxide substrate by means of a molecular beamepitaxy fabricating method using silicon as an original material in the oxygen atmosphere.The composite layer of the oxide and silicon is grown according to gradual decreasingthe pressure of oxygen atmosphere. A top silicon layer of uniform thickness is grown bymeans of a molecular beam epitaxy fabricating method using only silicon materialconsecutively on the composite layer.

申请人：ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

代理机构：Jacobson, Price, Holman & Stern, PLLC

更多信息请下载全文后查看